2SK2367 NEC, 2SK2367 Datasheet - Page 2

• Manufacturer Part Number: 2SK2367
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
Test Circuit 1 Avalanche Capability
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Test Circuit 3 Gate Charge
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 20 - 0 V
PG.
CHARACTERISTIC
PG.
I
G
R
V
= 2 mA
G
DD
50
= 25
D.U.T.
I
50
D
D.U.T.
I
AS
BV
DSS
Starting T
R
V
V
L
DD
DS
L
V
SYMBOL
R
| y
I
I
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
V
DSS
GSS
DD
d (on)
r
d (off)
f
rr
DS (on)
GS (off)
iss
oss
rss
F (S-D)
G
GS
GD
rr
fs
ch
A
|
= 25 ˚C)
V
0
Test Circuit 2 Switching Time
GS
t = 1 us
Duty Cycle
MIN.
5.0
2.5
PG.
t
1 600
TYP.
R
300
400
0.4
0.5
1.0
1.8
30
30
40
70
25
43
10
20
1 %
G
= 10
R
G
D.U.T.
MAX.
100
0.5
0.6
3.5
100
UNIT
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
C
R
V
DD
L
V
Wave Form
I
Wave Form
D
V
I
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 50 A/ s
GS
D
D
D
F
F
GS
DS
DS
DS
GS
DS
GS
GS
DD
G
DD
GS
= 15 A, V
= 15 A, V
= 8.0 A
= 8.0 A
= 15 A
= 10
= 10 V
= 10 V, I
= 10 V, I
= V
= 30 V, V
= 10 V
= 0
= 150 V
= 400 V
= 10 V
= 10 V
TEST CONDITIONS
V
I
D
2SK2367/2SK2368
GS
DSS
0
0
10 %
10 %
t
d (on)
, V
R
GS
GS
L
D
D
GS
t
= 18.8
= 1 mA
= 8.0 A
= 0
= 0
on
2SK2367
2SK2368
90 %
DS
= 0
t
r
= 0
V
I
D
GS (on)
t
d (off)
t
off
90 %
90 %
t
10 %
f