2SK2512 NEC, 2SK2512 Datasheet - Page 2

• Manufacturer Part Number: 2SK2512
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC

V
0
ELECTRICAL CHARACTERISTICS (T
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
GS
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
t = 1 s
Duty Cycle
Test Circuit 1 Switching Time
PG.
t
CHARACTERISTIC
R
1 %
G
= 10
R
G
D.U.T.
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
| y
I
C
t
t
t
t
Q
Q
Q
t
Q
V
I
C
C
V
DSS
GSS
d (on)
r
d (off)
f
rr
GS (off)
F (S-D)
DS (on)1
DS (on)2
iss
oss
rss
G
GS
GD
rr
fs
V
I
D
|
GS
0
0
A
10 %
10 %
t
d (on)
= 25 ˚C)
t
on
MIN.
90 %
1.0
15
t
r
V
I
D
GS (on)
t
d (off)
2 100
1 100
TYP.
500
380
320
320
101
100
180
t
1.5
1.0
off
11
16
20
45
40
90 %
7
90 %
t
10 %
f
MAX.
2.0
15
23
10
10
Test Circuit 2 Gate Charge
UNIT
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
PG.
V
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 100 A/ s
D
D
F
F
GS
GS
DS
DS
DS
GS
DS
GS
GS (on)
DD
G
DD
GS
= 45 A, V
= 45 A, V
= 23 A
= 45 A
= 10
= 10 V, I
= 4 V, I
= 10 V, I
= 10 V, I
= V
= 20 V, V
= 10 V
= 0
= 30 V
= 48 V
= 10 V
TEST CONDITIONS
I
G
DSS
= 10 V
= 2 mA
50
, V
D
GS
GS
D.U.T.
D
D
D
GS
= 23 A
= 1 mA
= 23 A
= 0
= 0
= 23 A
DS
= 0
= 0
2SK2512
R
V
DD
L