2SK2545 Toshiba Semiconductor, 2SK2545 Datasheet - Page 2

• Manufacturer Part Number: 2SK2545
• Description: FET Silicon N Channel Mos Type(for High speed/ High Voltage Switching)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K2545
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
I
V
I
V
V
V
V
V
I
I
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
= ±10 μA, V
= 6 A, V
= 6 A, V
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
≈ 400 V, V
GS
GS
2
D
D
D
GS
(Ta = 25°C)
GS
GS
Test Condition
Test Condition
= 1 mA
= 3 A
DS
DS
= 3 A
GS
= 0 V
= 0 V, dI
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
—
DR
D
/ dt = 100 A / μs
= 6 A
±30
600
Min
Min
2.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1300
1000
Typ.
Typ.
130
400
150
0.9
5.5
7.0
—
—
—
—
—
25
45
40
30
18
12
—
—
—
2006-11-08
2SK2545
1.25
−1.7
Max
Max
±10
100
4.0
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
V