2SK2655 Fuji Electric, 2SK2655 Datasheet - Page 2

• Manufacturer Part Number: 2SK2655
• Description: N-channel MOS-FET
• Manufacturer: Fuji Electric

900V
> Characteristics
N-channel MOS-FET
Typical Drain-Source On-State-Resistance vs. I
Allowable Power Dissipation vs. T
Typical Output Characteristics
Typical Capacitances vs. V
R
I
DS(on)
D
=f(V
C=f(V
=f(I
T
DS
c
); 80µs pulse test; T
D
[°C]
); 80µs pulse test; T
DS
4
7
10
P
V
); V
V
D
=f(Tc)
DS
DS
I
D
GS
[V]
[A]
[V]
1
=0V; f=1MHz
8A
C
=25°C
C
=25°C
100W
DS
C
D
This specification is subject to change without notice!
FAP-IIS Series
2SK2655-01R
Drain-Source On-State Resistance vs. T
Typical Forward Transconductance vs. I
Safe Operation Area
I
D
g
=f(V
fs
=f(I
Avalanche Energy Derating
DS
D
E
Starting T
); 80µs pulse test; V
): D=0,01, Tc=25°C
as
R
V
=f(starting T
12
DS(on)
DS
[V]
= f(T
T
ch
ch
I
2
D
8
ch
[°C]
[°C]
[A]
ch
); I
5
); V
D
=4A; V
CC
DS
=90V; I
=25V; T
GS
=10V
AV
ch
=8A
=25°C
ch
D
Forward Characteristics of Reverse Diode
Transient Thermal impedance
I
Typical Transfer Characteristics
D
Gate Threshold Voltage vs. T
=f(V
Z
thch
GS
I
F
V
=f(V
); 80µs pulse test; V
=f(t) parameter:D=t/T
GS(th)
SD
t [s]
=f(T
); 80µs pulse test; V
T
V
ch
V
3
ch
GS
); I
SD
[°C]
D
[V]
[V]
=1mA; V
9
6
DS
=25V; T
DS
=V
GS
=0V
GS
ch
=25°C
ch