2SK3130 Toshiba Semiconductor, 2SK3130 Datasheet
2SK3130
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2SK3130 Summary of contents
Page 1
... GSS 345 150 °C ch −55~150 T °C stg Symbol Max Unit R 3.125 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK3130 Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) 2004-07-06 ...
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... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/µ 2SK3130 Min Typ. Max Unit ⎯ ⎯ ±10 µA ±30 ⎯ ⎯ V ⎯ ⎯ µA 100 ⎯ ⎯ 600 V ⎯ 2.0 4.0 V ⎯ Ω ...
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... Gate-source voltage (ON) 100 Common source Tc = 25°C Pulse test 10 100 0.1 Drain current I 3 2SK3130 I – Common source Tc = 25°C Pulse test 6.2 6.0 5 – Common source Tc = 25°C Pulse test ...
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... Case temperature Tc (°C) Dynamic input/output characteristics 500 400 V DS 300 200 100 200 Total gate charge Q 4 2SK3130 I – −1 V −0.6 −0.8 −1.0 −1.2 V – Common source Pulse test 40 80 ...
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... Channel temperature (initial (°C) 1000 15 V −15 V Test circuit = 25 Ω 16 2SK3130 10 − 100 125 150 B VDSS Wave form ⎛ ⎞ VDSS ⎜ ⎜ ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2SK3130 030619EAA 2004-07-06 ...