2SK3130 Toshiba Semiconductor, 2SK3130 Datasheet - Page 2

• Manufacturer Part Number: 2SK3130
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3130
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
DRP
I
Q
DR
DSF
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
= ±100 µA, V
10 V
0 V
I
I
dI
DR
DR
= ±25 V, V
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 400 V, V
DR
2
(Ta = 25°C)
= 6 A, V
= 6 A, V
/dt = 100 A/µs
w
Test Condition
D
D
D
GS
= 10 µs
GS
Test Condition
= 1 mA
= 3 A
DS
GS
= 3 A
GS
DS
GS
GS
= 0 V
= 0 V, f = 1 MHz
I
D
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V
= 0 V,
= 3 A
⎯
⎯
V
DD
D
R
∼ − 300 V
L
= 6 A
V
= 100 Ω
OUT
Min
±30
600
Min
2.0
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1300
Typ.
1.12
Typ.
0.21
130
400
150
5.0
25
45
40
30
18
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
85
2004-07-06
2SK3130
Max
1.55
Max
−1.7
±10
100
4.0
⎯
⎯
⎯
⎯
⎯
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
Unit
Unit
µC
µA
µA
pF
nC
ns
ns
V
V
V
Ω
S
A
A
V