BU2523AX Philips Semiconductors, BU2523AX Datasheet - Page 2

• Manufacturer Part Number: BU2523AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
September 1997
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
t
t
CES
CES
EBO
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
V
I C
I B
CE
Fig.1. Switching times waveforms.
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
DIODE
5 us
TRANSISTOR
16 us
6.5 us
2
I
B
ICsat
end
CONDITIONS
R.H.
t
t
t
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
I
CONDITIONS
I
V
L
B
B
C
C
C
C
Csat
B
j
BE
BE
EB
CC
= 1 mA
= 0 A; I
= 5.5 A; I
= 5.5 A; I
= 1 A; V
= 5.5 A; V
= 125 ˚C
= 0.4 H; -V
65 % ; clean and dustfree
= 0 V; V
= 0 V; V
= 7.5 V; I
= 5.5 A; L
145 V; I
2
C
CE
= 100 mA;
B
B
B(end)
CE
CE
CE
= 1.1 A
= 1.1 A
= 5 V
C
C
= V
= V
= 0 A
= 5 V
BB
= 200 H; C
= 0.56 A;
= -4 V; -I
CESMmax
CESMmax
IC
IB
Fig.2. Switching times definitions.
;
BM
fb
= 3.3 A
= 4 nF;
IBend
ts
MIN.
MIN.
0.80
800
7.5
5
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.88
0.15
1.5
22
14
8
-
-
-
-
-
Product specification
tf
10 %
90 %
ICsat
BU2523AX
MAX.
MAX.
MAX.
2500
0.97
10.3
- IBM
1.0
2.0
1.0
5.0
2.0
0.3
-
-
-
-
t
t
Rev 1.100
UNIT
UNIT
UNIT
mA
mA
mA
pF
V
V
V
V
V
s
s