BU2523AX Philips Semiconductors, BU2523AX Datasheet - Page 3
BU2523AX
Manufacturer Part Number
BU2523AX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU2523AX.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
IBend
-VBB
Fig.4. High and low DC current gain. h
Fig.5. High and low DC current gain. h
100
100
10
10
1
0.01
1
0.01
hFE
hFE
VCE = 1 V
VCE = 5 V
Fig.3. Switching times test circuit .
LB
0.1
0.1
V
V
CE
CE
= 1 V
= 5 V
T.U.T.
1
1
+ 150 v nominal
adjust for ICsat
Lc
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
10
10
Cfb
BU2523AF/X
BU2523AF/X
IC / A
IC / A
FE
FE
= f (I
= f (I
100
100
C
C
)
)
3
Fig.6. Typical collector-emitter saturation voltage.
Fig.7. Typical base-emitter saturation voltage.
0.01
1.2
1.1
0.9
0.8
0.7
0.6
100
0.1
10
10
1
1
1
0
0.1
VBEsat / V
0
PTOT / W
VCEsat / V
P
TOT
V
V
CE
BE
IC = 6 A
Ths = 25 C
Ths = 85 C
= f (I
sat = f (I
IC/IB = 10
Fig.8. Typical losses.
sat = f (I
0.5
1
B
); I
1
C
C
); parameter I
B
=5.5 A; f = 64 kHz
); parameter I
2
1
IB / A
IC/IB = 5
10
Product specification
BU2523AF/DF/AX/DX
IC = 4.5 A
Ths = 25 C
Ths = 85 C
1.5
3
BU2523AX
C
BU2523AF/X
/I
Ths = 25 C
Ths = 85 C
C
BU2523AF/X
IC / A
B
IB / A
Rev 1.100
100
4
2