BU2523AX Philips Semiconductors, BU2523AX Datasheet - Page 4

• Manufacturer Part Number: BU2523AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
ts = f (I
Fig.9. Typical collector storage and fall time.
5
4
3
2
1
0
120
110
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0
ts/tf / us
0
0.1
10
Fig.10. Normalised power dissipation.
1
Fig.11. Transient thermal impedance.
1E-06
B
0
PD%
); tf = f (I
Zth / (K/W)
D = 0
Z
PD% = 100 P
0.05
0.02
0.5
0.2
0.1
th j-hs
20
0.5
= f(t); parameter D = t
B
); I
40
1E-04
C
= 5.5 A; T
60
D
Ths / C
/P
1
t / s
D 25˚C
80
Normalised Power Derating
1E-02
j
with heatsink compound
= f (T
= 85˚C; f = 64 kHz
P
BU2523AF/DF/AX/DX
100
D
1.5
t
p
mb
p
120
T
/T
)
1E+00
BU2525AF
IB / A
D =
140
T
t
p
t
2
4
30
20
10
IC / A
IBend
0
-VBB
Fig.13. Reverse bias safe operating area. T
100
Fig.14. I
8
7
6
5
4
3
2
1
0
L
Fig.12. Test Circuit RBSOA. V
0
Ic(sat) (A)
C
= 1.5 mH; V
C
operation for optimum performance
10
FB
Csat
= 0.5 - 8 nF; I
during normal running vs. frequency of
20
LB
-V
CL
30
frequency (kHz)
BB
= 1450 V; L
= 1 - 5 V;
VCE / V
LC
B(end)
40
VCC
= 0.55 - 1.1 A
T.U.T.
50
Product specification
B
= 0.3 - 2 H;
CC
60
BU2523AX
BU2523AF/AX
= 150 V;
1000
70
Area where
fails occur
Rev 1.100
j
1500
80
BU2523
T
CFB
jmax
VCL