BU2530AL Philips Semiconductors, BU2530AL Datasheet - Page 3

• Manufacturer Part Number: BU2530AL
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
IBend
-VBB
Fig.4. High and low DC current gain. h
Fig.5. High and low DC current gain. h
100
100
10
10
1
0.01
1
0.01
hFE
hFE
VCE = 1 V
VCE = 5 V
Fig.3. Switching times test circuit .
LB
0.1
0.1
V
V
CE
CE
= 1 V
= 5 V
T.U.T.
1
1
+ 150 v nominal
adjust for ICsat
Lc
10
10
Cfb
Tj = 85 C
Tj = 25 C
Tj = 85 C
Tj = 25 C
BU2530/2AL
BU2530/2AL
IC / A
IC / A
FE
FE
= f (I
= f (I
100
100
C
C
)
)
3
Fig.6. Typical collector-emitter saturation voltage.
Fig.7. Typical base-emitter saturation voltage.
0.01
0.9
0.8
0.7
0.6
100
0.1
10
10
1
1
1
0
0.1
VBEsat / V
0
PTOT / W
VCEsat / V
P
TOT
Fig.8. Typical turn-off losses.
V
V
= f (I
CE
BE
IC = 9 A
sat = f (I
Tj = 85 C
Tj = 25 C
sat = f (I
1
1
B
); parameter I
IC/IB = 10
1
C
); parameter I
B
); parameter I
IC = 7 A
2
2
C
IC/IB = 5
; f = 32 kHz
10
Product specification
Tj = 85 C
Tj = 25 C
3
3
C
BU2530AL
Tj = 85 C
Tj = 25 C
/I
C
IC / A
BU2530/2AL
BU2530/2AL
B
IB / A
BU2530AL
IB / A
Rev 1.200
100
4
4