BU2530AL Philips Semiconductors, BU2530AL Datasheet - Page 4

• Manufacturer Part Number: BU2530AL
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
ts = f (I
Fig.9. Typical collector storage and fall time.
10
120
110
100
0.001
8
6
4
2
0
0.01
90
80
70
60
50
40
30
20
10
0.1
0
0
10
ts/tf / us
B
Fig.10. Normalised power dissipation.
1
); tf = f (I
Fig.11. Transient thermal impedance.
0
PD%
Zth / K/W
D = 0
0.05
0.02
0.5
0.2
0.1
1.0E-06
Z
PD% = 100 P
th j-mb
20
B
1
); parameter I
= f(t); parameter D = t
40
1E-04
60
D
Tmb / C
/P
2
t / s
D 25˚C
80
Normalised Power Derating
C
1E-02
; T
P
D
= f (T
100
j
= 85˚C; f = 32 kHz
t
p
3
BU2530AL/32AL
T
mb
p
120
/T
)
D =
BU2530AL
1E+00
IB / A
T
t
p
t
140
4
4
IBend
-VBB
Fig.13. Reverse bias safe operating area. T
40
30
20
10
Fig.12. Test Circuit RBSOA. V
0
100
L
IC / A
C
= 1.5 mH; V
C
FB
= 1 - 10 nF; I
LB
-V
CL
BB
= 1450 V; L
VCE / V
= 1 - 5 V;
LC
B(end)
VCC
T.U.T.
= 1.3 - 2.6 A
Product specification
B
= 1 - 3 H;
CC
1000
BU2530AL
BU2530/32AL
= 150 V;
Area where
fails occur
1500
Rev 1.200
j
T
CFB
jmax
VCL