2SJ598 NEC, 2SJ598 Datasheet

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2SJ598

Manufacturer Part Number
2SJ598
Description
SWITCHING P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet

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www.DataSheet4U.com
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
for solenoid, motor and lamp driver.
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
• Low on-state resistance:
• Low C
• Built-in gate protection diode
• TO-251/TO-252 package
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SJ598 is P-channel MOS Field Effect Transistor designed
R
R
DS(on)1
DS(on)2
2. Starting T
iss
= 130 mΩ MAX. (V
= 190 mΩ MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 720 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
A
Note2
DS
C
GS
= 25°C)
= 25°C)
= 0 V)
GS
GS
= 0 V)
= –10 V, I
= –4.0 V, I
DD
P-CHANNEL POWER MOS FET
= –30 V, R
The mark
D
A
D
= –6 A)
= 25°C)
= –6 A)
I
D(pulse)
V
V
I
G
D(DC)
T
E
T
I
P
P
GSS
DATA SHEET
DSS
AS
stg
AS
= 25 Ω, V
ch
T
T
SWITCHING
shows major revised points.
–55 to +150
GS
14.4
MOS FIELD EFFECT TRANSISTOR
–60
m20
m12
m30
150
–12
1.0
23
= –20 → 0 V
mJ
°C
°C
W
W
V
V
A
A
A
ORDERING INFORMATION
PART NUMBER
2SJ598-Z
2SJ598
(TO-251)
(TO-252)
2SJ598
TO-252 (MP-3Z)
TO-251 (MP-3)
PACKAGE
2000, 2001

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2SJ598 Summary of contents

Page 1

... DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. www.DataSheet4U.com FEATURES • Low on-state resistance 130 mΩ MAX. (V DS(on 190 mΩ MAX. (V DS(on)2 • Low 720 pF TYP. iss iss • Built-in gate protection diode • TO-251/TO-252 package ...

Page 2

... D.U.T. V (− 10% Wave Form (− 10% 10 Wave Form d(on) r d(off 2SJ598 UNIT µ A µ mΩ mΩ 90% 90 off ...

Page 3

... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH µ 100 m 1 100 PW - Pulse Width - s Data Sheet D14656EJ4V0DS TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 120 140 Case Temperature - ˚ 125˚C/W th(ch- 5.43˚C/W th(ch-C) Single Pulse 10 100 1000 2SJ598 160 3 ...

Page 4

... Drain to Source Voltage - V DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 I = – 100 –5 –10 – Gate to Source Voltage - V GS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE V = – – – 100 150 T - Channel Temperature - ˚C ch 2SJ598 –10 –20 ...

Page 5

... I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS – – – – –30 V –40 –12 V –30 –20 – Gate Charge - nC G 2SJ598 –1.5 –100 –12 –10 –8 –6 –4 – ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting T Data Sheet D14656EJ4V0DS 2SJ598 V = – Ω –20 → ≤ – 100 125 150 - Starting Channel Temperature - ˚C ...

Page 7

... When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.3 ±0.2 0.5 ±0 Gate 2. Drain 3. Source 4. Fin (Drain) Data Sheet D14656EJ4V0DS 2) TO-252 (MP-3Z) 6.5 ±0.2 2.3 ±0.2 5.0 ±0.2 0.5 ±0 0.9 0.8 1.1 ±0.2 MAX. MAX. 2.3 2.3 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2SJ598 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ598 M8E 02. 11-1 ...

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