2SJ598 NEC, 2SJ598 Datasheet - Page 2

• Manufacturer Part Number: 2SJ598
• Description: SWITCHING P-CHANNEL POWER MOS FET
• Manufacturer: NEC

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ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
CHARACTERISTICS
I
PG.
G
V
= −2 mA
50 Ω
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
L
DD
L
V
ch
DD
SYMBOL
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
A
t
t
t
oss
iss
rss
GS
GD
rr
fs
r
f
G
rr
= 25°C)
|
Data Sheet D14656EJ4V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 100 A /
V
D
D
F
F
0
DS
DS
DS
GS
GS
DS
GS
GS
DD
DD
GS
GS
GS
G
= 12 A, V
= 12 A, V
= –6 A
= –12 A
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 0 Ω
(−)
= –48 V
= –60 V, V
= –10 V, I
= –10 V, I
= –10 V
= –10 V, I
= –4.0 V, I
= 0 V
= –10 V
= –30 V
= –10 V
= m
TEST CIRCUIT 2 SWITCHING TIME
µ
16 V, V
τ
TEST CONDITIONS
GS
GS
D
D
µ
D
= 0 V
= 0 V
R
D
GS
s
DS
= –1 mA
= –6 A
= –6 A
G
= –6 A
= 0 V
D.U.T.
= 0 V
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
–1.5
5
V
V
V
GS
DS
DS
0
0
(−)
(−)
TYP.
10%
t
–2.0
0.98
102
131
720
150
100
90%
d(on)
11
50
35
10
15
50
7
4
3
4
t
on
10%
MAX.
t
–2.5
r
–10
m
130
190
V
10
GS
t
10%
d(off)
2SJ598
t
off
90%
UNIT
mΩ
mΩ
µ
µ
nC
nC
nC
nC
90%
pF
pF
pF
ns
ns
ns
ns
ns
t
V
S
V
f
A
A