LM494 National Semiconductor, LM494 Datasheet - Page 3

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LM494

Manufacturer Part Number
LM494
Description
Pulse Width Modulated Control Circuit
Manufacturer
National Semiconductor
Datasheet

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Symbol
PWM COMPARATOR SECTION (Figure 9)
V
I
I
OUTPUT SECTION
V
I
I
OUTPUT CONTROL (Figure 6)
V
V
TOTAL DEVICE
I
OUTPUT AC CHARACTERISTICS Use Recommended Operating Conditions with T
t
t
O
O
C(off)
E(off)
CC
r
f
LM494
Electrical Characteristics
V
Note 1 T
Note 2 Ratings apply to ambient temperature at 25 C Above this temperature derate the 16L-Ceramic DIP at 10 mW C and the 16L-Molded DIP at 8 3 mW C
Note 3 Selected devices with tightened tolerance reference voltage available
Note 4 These limits apply when the voltage measured at Lead 3 is within the range specified
THI
CE(sat)
OCL
OCH
b
a
CC
e
J Max
15V f
(Figure 3)
(Figure 4)
(Figure 3)
(Figure 4)
Inhibit Threshold Voltage
Output Sink Current
(Note 4)
Output Source Current
(Note 4)
Output Saturation
Voltage Common Emitter
Configuration (Figure 3)
Emitter Follower
Configuration (Figure 4)
Collector Off-State Current
Emitter Off-State Current
Output Control Voltage
Required for Single Ended or
Parallel Output Operation
Output Control Voltage
Required for Push-Pull
Operation
Standby Power Supply Current
Rise Time of Output Voltage
Common Emitter Configuration
Emitter Follower Configuration
Fall Time of Output Voltage
Common Emitter Configuration
Emitter Follower Configuration
e
OSC
150 C for the Molded DIP and 175 C for the Ceramic DIP
e
Parameter
10 kHz unless otherwise specified (Continued)
T
A
Zero Duty Cycle
0 5V
0 5V
V
I
V
V
V
V
C
e
E
C
CC
CC
E
e
e
e
0 C to
e
e
e
s
s
200 mA
0V
15V I
0
40V V
V
V
V
C
3 s
3 s
a
e
E
70 C for the LM494C T
3 5V
3 5V
e
40V
CE
200 mA
Conditions
e
3
40V
0 C
b
0 C
b
40 C
40 C
s
s
T
T
s
s
A s
A s
T
T
A s
A s
a
a
A
A
70 C
70 C
e b
a
a
e
85 C
85 C
25 C
40 C to
b
Min
2 0
2 4
a
0 2
85 C for the LM494I
b
Typ
100
100
4 0
1 1
1 5
2 0
6 0
25
40
0 6
b
Max
100
200
200
100
100
4 5
1 3
2 5
0 4
10
100
Units
mA
mA
mA
ns
ns
V
V
V
V
A
A

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