MRF1047T1

Manufacturer Part NumberMRF1047T1
DescriptionNPN Silicon Low Noise Transistor
ManufacturerMotorola
MRF1047T1 datasheet
 


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The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz f discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at V
I
= 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
C
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high f
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
Low Noise Figure, NF
= 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
min
High Current Gain–Bandwidth Product, f = 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous [Note 3]
Power Dissipation @ T
= 75 C
C
Derate Linearly above T
= 75 C at
C
Storage Temperature Range
Maximum Junction Temperature
NOTES: 1. Meets Human Body Model (HBM) 300 V and Machine Model (MM) 75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Thermal Resistance, Junction–to–Case
NOTE: To calculate the junction temperature use T
temperature measured on collector lead adjacent to the package body.
MOTOROLA RF PRODUCTS DEVICE DATA
= 3.0 V and
CE
low operating current transistor with
= 26 dBm @ 1.0 GHz 3.0 V
3
Symbol
Value
Unit
V
5.0
Vdc
CEO
V
12
Vdc
CBO
V
2.5
Vdc
EBO
I
45
mAdc
C
P
0.172
W
D(max)
2.3
mW/ C
T
–55 to 150
C
stg
T
150
C
J(max)
Symbol
Max
Unit
R
435
C/W
JC
= (P
x R
) + T
. The case
J
D
JC
C
Order this document by MRF1047T1/D
RF NPN
SILICON TRANSISTOR
f = 12 GHz
NF
= 1.0 dB
min
I
= 45 mA
CMAX
V
= 5.0 V
CEO
SEMICONDUCTOR
TECHNICAL DATA
3
1
2
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
ORDERING INFORMATION
Device
Marking
Package
MRF1047T1
WB
SC–70
Tape & Reel*
*3,000 Units per 8 mm, 7 inch reel.
Motorola, Inc. 2001
Rev 3
1

MRF1047T1 Summary of contents

  • Page 1

    ... The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz f discrete bipolar silicon process. The minimum noise figure is 1 3.0 mA. The noise performance of the MRF1047T1 at low bias makes C this device the ideal choice in high gain, low noise applications. This device is well suited for low–voltage, low–current, front–end applications, for use in pagers, cellular and cordless phones, and other portable wireless systems. The MRF1047T1 has 16 emitter fingers, with self– ...

  • Page 2

    ... NOTES: 1. Pulse width 300 s, duty cycle 2% pulsed. 2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows MAG and Z matched for optimum IP3. in out 2 MRF1047T1 = 25 C, unless otherwise noted) C Symbol = BR)CEO = (BR)CBO = ...

  • Page 3

    ... Figure 1. Capacitance versus Voltage Figure 3. DC Current Gain versus Collector Current MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1 Figure 4. Gain–Bandwidth Product Figure 5. Functional Circuit Schematic Figure 2. Input Capacitance versus Voltage versus Collector Current 3 ...

  • Page 4

    ... Figure 8. Maximum Stable/Available Gain and Forward Insertion Gain versus Collector Current Figure 10. Minimum Noise Figure and Associated Gain versus Frequency 4 MRF1047T1 Figure 7. Maximum Stable/Available Gain and Forward Insertion Gain versus Frequency Figure 9. Maximum Stable/Available Gain and Forward Insertion Gain versus Collector Current Figure 11 ...

  • Page 5

    ... Figure 12. Minimum Noise Figure and Associated Gain versus Collector Current Figure 14. Output Third Order Intercept and Output Power at 1.0 dB Gain Compression versus Collector Current MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1 Figure 13. Minimum Noise Figure and Associated Gain versus Collector Current 5 ...

  • Page 6

    ... MRF1047T1 –10 3.49 171 0.029 –30 3.35 154 0.082 –48 3.03 137 0.124 –64 2.75 124 0.153 –79 2.51 112 0.174 –85 2.40 107 0.181 –105 2 ...

  • Page 7

    ... MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1 137 1.65 35 0.301 120 1.50 27 0.346 106 1.40 19 0.395 96 1.32 11 0.444 –19 13.66 162 0.020 –49 10.92 135 0.052 –68 8 ...

  • Page 8

    ... Table 2. Common–Emitter Noise Parameters (Vdc) (mA) (GHz) 1.0 1.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 3.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 5.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 3.0 1.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 3.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 5.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 10.0 0.3 0.5 0.7 0.9 1.0 1.5 2.0 2.4 8 MRF1047T1 NF min O (dB) Magnitude Angle 1.00 0.67 15 1.04 0.64 25 1.08 0.61 35 1.13 0.59 46 1.16 0.57 51 1.28 0.52 81 1.41 0.48 116 1.52 0.47 146 0.83 0.56 14 0.88 0.52 23 0.94 0.48 32 0.99 0.45 42 1.02 0.43 47 1.16 0.38 79 1.31 0.35 117 1.44 0.35 152 0.90 0.48 13 0.94 0.44 21 0.98 0.40 31 1.03 0.36 42 1.06 0.35 48 1.20 0.30 82 1.37 0.28 123 1.53 0.30 161 1.11 0.67 14 1.12 0.65 22 1.13 0.64 31 1.16 0.62 41 1.17 0.60 46 1.26 0.56 74 1.39 0.51 106 1.51 0.47 135 0.94 0.60 13 0.96 0.57 19 0.98 0.54 25 1.01 0.51 33 1.03 0.50 37 1.13 0.44 61 1.26 0.37 92 1.39 0.32 121 0.92 0.53 13 0.95 0.49 20 0.99 0.46 28 1.03 0.43 37 1.06 0.42 42 1.20 0. ...

  • Page 9

    ... IKF 0.18 ISE 3.140E–14 NE 1.78 BR 26.8 NR 0.9974 VAR 2.0 IKR 7.50E–03 ISC 2.200E–14 NC 1.48 RB 6.924 Figure 15. MRF1047 SC–70 Package Equivalent Circuit MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1 Name Value IRB 7.50E–03 RBM 4.0 RE 1.0 RC 7.0 XTB 0 EG 1.11 XTI 3.0 CJE 5.70E–13 VJE 0.98 MJE ...

  • Page 10

    ... Figure 16. Constant Gain and Noise Figure Contours Figure 17. Constant Gain and Noise Figure Contours 10 MRF1047T1 (f = 1.0 GHz 1 1 — Potentially Unstable f (GHz) NF Opt (dB) 1.0 1. 2.0 GHz 1 1 — Potentially Unstable f (GHz) NF Opt (dB) 2.0 1.41 MOTOROLA RF PRODUCTS DEVICE DATA 0.57 51.3 21.8 0. 0.48 115.6 9 ...

  • Page 11

    ... Figure 18. Constant Gain and Noise Figure Contours Figure 19. Constant Gain and Noise Figure Contours MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1 (f = 1.0 GHz 3 3 — Potentially Unstable f (GHz) NF Opt (dB) 1.0 1. 2.0 GHz 3 3 — Potentially Unstable f (GHz) NF Opt (dB) 2.0 1. 0.50 37.1 17.6 0. 0.37 91.7 10.7 1.03 11 ...

  • Page 12

    ... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 MOTOROLA RF PRODUCTS DEVICE DATA MRF1047T1/D ...