MRF1511T1 Motorola, MRF1511T1 Datasheet

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MRF1511T1

Manufacturer Part Number
MRF1511T1
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Manufacturer
Motorola
Datasheet
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
applications at frequencies to 175 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
(1) Calculated based on the formula P D =
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 1
Motorola, Inc. 2000
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
The MRF1511T1 is designed for broadband commercial and industrial
Specified Performance @ 175 MHz, 7.5 Volts
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Derate above 25 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
Characteristic
Rating
T J – T C
R JC
G
D
S
Symbol
Symbol
V DSS
R JC
V GS
T stg
P D
T J
I D
MRF1511T1
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 466–02, STYLE 1
175 MHz, 8 W, 7.5 V
– 65 to +150
BROADBAND
Value
62.5
Max
(PLD–1.5)
150
PLASTIC
0.5
40
4
2
20
Order this document
www.DataSheet4U.com
by MRF1511/D
MRF1511T1
Watts
W/ C
Unit
Unit
Vdc
Vdc
Adc
C/W
C
C
1

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MRF1511T1 Summary of contents

Page 1

... The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. ...

Page 2

... DS = 7.5 Vdc MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Source Amplifier Power Gain ( 7.5 Vdc, P out = 8 Watts 150 mA 175 MHz) Drain Efficiency ( 7.5 Vdc, P out = 8 Watts 150 mA 175 MHz) MRF1511T1 2 Symbol Min Typ Max I DSS — ...

Page 3

... Microstrip 0.260 x 0.223 Microstrip 0.095 x 0.080 Microstrip 0.418 x 0.080 Microstrip 1.057 x 0.080 Microstrip 0.120 x 0.080 Microstrip Glass Teflon , 31 mils, 2 oz. Copper 7.5 V 135 MHz 175 MHz 155 MHz out , OUTPUT POWER (WATTS) versus Output Power MRF1511T1 3 ...

Page 4

... BIASING CURRENT (mA) Figure 6. Output Power versus Biasing Current 14 12 175 MHz SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1511T1 7 Figure 5. Drain Efficiency versus Output Power ...

Page 5

... Microstrip 1.032 x 0.080 Microstrip 0.145 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.134 x 0.080 Microstrip 0.490 x 0.080 Microstrip 0.872 x 0.080 Microstrip 0.206 x 0.080 Microstrip Glass Teflon , 31 mils, 2 oz. Copper 7 MHz 66 MHz 77 MHz versus Output Power MRF1511T1 5 ...

Page 6

... MHz 8 66 MHz 88 MHz 150 25.7 dBm SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1511T1 MHz 7 out , OUTPUT POWER (WATTS) Figure 14. Drain Efficiency versus ...

Page 7

... Figure 10 Complex conjugate of the load impedance at given output power, voltage, frequency, and D > Output Device Matching Under Test Network MHz 3.62 –j0.751 3.59 –j0.129 3.37 –j0.173 MRF1511T1 7 ...

Page 8

... MHz | 0.90 –168 50 0.89 –173 100 0.88 –176 150 0.88 –177 200 0.88 –177 250 0.88 –178 300 0.88 –177 350 0.89 –177 400 0.89 –177 450 0.89 –177 500 0.89 –177 MRF1511T1 150 18.92 95 0.015 11.47 91 0.016 5.66 85 0.016 3.75 82 0.015 2.78 78 0.014 2.16 75 0.014 1.77 72 0.012 1.49 69 0.013 1.26 66 0.013 1.08 64 0.011 ...

Page 9

... ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. 9 — can result in permanent GS ), whose value is application dependent. = 150 mA, which is the DQ may have DQ MRF1511T1 9 ...

Page 10

... Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large–signal MRF1511T1 10 impedances are provided, and will yield a good first pass approximation. ...

Page 11

... MOTOROLA RF DEVICE DATA NOTES MRF1511T1 11 ...

Page 12

... Customer Focus Center: 1–800–521–6274 Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. – http://sps.motorola.com/mfax/ HOME PAGE: http://www.motorola.com/semiconductors/ MRF1511T1 12 PACKAGE DIMENSIONS _ 10 DRAFT U É ...

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