MRF1511T1 Motorola, MRF1511T1 Datasheet - Page 7

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MRF1511T1

Manufacturer Part Number
MRF1511T1
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Manufacturer
Motorola
Datasheet
MOTOROLA RF DEVICE DATA
Z in
Z OL * = Complex conjugate of the load
Note: Z OL * was chosen based on tradeoffs between gain, drain efficiency, and device stability.
V DD = 7.5 V, I DQ = 150 mA, P out = 8 W
MHz
135
155
175
= Complex conjugate of source
f
impedance with parallel 15
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
impedance at given output power,
voltage, frequency, and D > 50 %.
f = 175 MHz
Figure 19. Series Equivalent Input and Output Impedance
f = 88 MHz
20.1 –j0.5
17.0 +j3.6
15.2 +j7.9
Z in
Z OL *
Input
Matching
Network
135
155
77
66
2.53 –j2.61
3.01 –j2.48
2.52 –j3.02
Z OL *
Z OL *
Z
in
Z o = 10
Device
Under Test
f = 175 MHz
Z in
Z OL * = Complex conjugate of the load
Z
OL
155
V DD = 7.5 V, I DQ = 150 mA, P out = 8 W
*
MHz
= Complex conjugate of source
66
77
88
135
f
Z in
impedance with parallel 15
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
impedance at given output power,
voltage, frequency, and D > 50 %.
Output
Matching
Network
25.3 –j0.31
25.6 +j3.62
26.7 +j6.79
Z in
77
66
f = 88 MHz
Z in
3.62 –j0.751
3.59 –j0.129
3.37 –j0.173
Z OL *
MRF1511T1
7

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