MRF5S21090LSR3 Motorola, MRF5S21090LSR3 Datasheet

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MRF5S21090LSR3

Manufacturer Part Number
MRF5S21090LSR3
Description
RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 1
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
I
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power
40
DQ
access the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
Derate above 25°C
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 19 W CW
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 19 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 26%
IM3 — - 37.5 dBc
ACPR — - 40.5 dBc
µ″ Nominal.
= 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
C
= 25°C
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
DD
Operation
Go to: www.freescale.com
DD
= 28 Volts,
-
5 MHz
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
MRF5S21090LSR3
CASE 465A - 06, STYLE 1
MRF5S21090LR3 MRF5S21090LSR3
MRF5S21090LR3
CASE 465 - 06, STYLE 1
MRF5S21090LSR3
MRF5S21090LR3
LATERAL N - CHANNEL
2170 MHz, 19 W AVG.,
RF POWER MOSFETs
NI - 780S
NI - 780
2 x W - CDMA, 28 V
- 65 to +150
Value (1,2)
- 0.5, +15
Value
1.28
0.78
0.80
224
200
65
Order this document
by MRF5S21090L/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF5S21090LSR3 Summary of contents

Page 1

... RF POWER MOSFETs 5 MHz - CASE 465 - 06, STYLE 780 MRF5S21090LR3 CASE 465A - 06, STYLE 780S MRF5S21090LSR3 Symbol Value V 65 DSS V - 0.5, + 224 D 1. +150 stg T 200 J Symbol Value (1,2) R θJC 0.78 0.80 MRF5S21090LR3 MRF5S21090LSR3 Unit Vdc Vdc Watts W/°C °C °C Unit °C/W 1 ...

Page 2

... MHz MHz and f2 +5 MHz.) Input Return Loss ( Vdc Avg 850 mA 2112.5 MHz, DD out 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) (1) Part is internally matched both on input and output. MRF5S21090LR3 MRF5S21090LSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS ...

Page 3

... D5534M07B1K00R CR1206 564JT RM73B2B120JT Go to: www.freescale.com C11 C12 C13 W1 Z18 Z20 Z15 Z16 Z17 Z19 Z21 RF OUTPUT C2 C15 = 2.55 r Manufacturer ATC ATC ATC Kemet ATC ATC ATC ATC ATC ATC Newark Newark Newark Newark Garrett Electronics MRF5S21090LR3 MRF5S21090LSR3 3 ...

Page 4

... Freescale Semiconductor, Inc C14 Figure 2. MRF5S21090 Test Circuit Component Layout MRF5S21090LR3 MRF5S21090LSR3 C10 C9 R3 C11 C4 C6 For More Information On This Product, Go to: www.freescale.com C13 C12 C2 C15 MRF5S21090 Rev 5 MOTOROLA RF DEVICE DATA ...

Page 5

... DQ 1200 mA 1000 mA 850 mA 650 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Ideal P3dB = 51.17 dBm (130.9 W) Actual Vdc 850 Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 2140 MHz INPUT POWER (dBm) in Input Power MRF5S21090LR3 MRF5S21090LSR3 42 5 ...

Page 6

... Output Power 100 10 1 0.1 0.01 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5S21090LR3 MRF5S21090LSR3 6 TYPICAL CHARACTERISTICS −20 −15 −30 −20 −40 −25 −50 η −30 −60 −70 −35 − ...

Page 7

... W Avg out source load MHz Ω Ω 2100 3.4 - j5.1 2.4 - j2.0 2120 3.2 - j5.4 2.2 - j2.1 2160 3.0 - j4.4 2.1 - j1.9 2200 3.0 - j4.0 1.8 - j1.6 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Network Test Z Z source load Go to: www.freescale.com MRF5S21090LR3 MRF5S21090LSR3 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF5S21090LR3 MRF5S21090LSR3 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF5S21090LR3 MRF5S21090LSR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF5S21090LR3 MRF5S21090LSR3 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... −−− 0.040 −−− 1.02 (INSULATOR) Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF B M bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF5S21090LR3 MRF5S21090LSR3 11 ...

Page 12

... E Motorola Inc. 2004 HOW TO REACH US: USA / EUROPE / LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF5S21090LR3 MRF5S21090LSR3 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...

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