MRF5S21090LSR3 Motorola, MRF5S21090LSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF5S21090LSR3
• Description: RF Power Field Effect Transistors
• Manufacturer: Motorola

MRF5S21090LR3 MRF5S21090LSR3
0.0001
6
0.001
40
35
30
25
20
15
10
0.01
100
5
0
0.1
10
1
64 DPCH, 67% Clipping, Single Carrier Test Signal
0
V
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
DD
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
= 28 Vdc, I
G
IM3
ps
Power Gain and Drain Efficiency
2
1
P
DQ
versus Output Power
out
= 850 mA, f1 = 2135 MHz,
, POWER (WATTS) W−CDMA
PEAK−TO−AVERAGE (dB)
4
Freescale Semiconductor, Inc.
6
For More Information On This Product,
10
η
TYPICAL CHARACTERISTICS
8
ACPR
Go to: www.freescale.com
10
−15
−20
−25
−30
−35
−40
−45
−50
−55
Figure 11. MTBF Factor versus Junction Temperature
10
10
10
10
−100
−120
9
8
7
6
−110
100
−40
−60
−80
−20
−30
−50
−70
−90
This above graph displays calculated MTBF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I
−25
−IM3 @
3.84 MHz BW
−20
120
Figure 9. 2-Carrier W-CDMA Spectrum
T
−15
J
, JUNCTION TEMPERATURE (°C)
D
2
for MTBF in a particular application.
140
−10
−ACPR @
3.84 MHz BW
f, FREQUENCY (MHz)
MOTOROLA RF DEVICE DATA
−5
3.84 MHz
Channel BW
160
0
+ACPR @
3.84 MHz BW
180
5
10
200
+IM3 @
3.84 MHz BW
15
2
20
220
25