MRF9002R2 Motorola Inc, MRF9002R2 Datasheet

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MRF9002R2

Manufacturer Part Number
MRF9002R2
Description
RF Power Field Effect Transistor Array
Manufacturer
Motorola Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub - Micron MOSFET Line
RF Power Field Effect
Transistor Array
N - Channel Enhancement - Mode Lateral MOSFET
cies to 1.0 GHz. The high gain and broadband performance of this device make
it ideal for large - signal, common - source amplifier applications in 26 volt base
station equipment. The device is in a PFP - 16 Power Flat Pack package which
gives excellent thermal performances through a solderable backside contact.
• Typical Performance at 960 MHz, 26 Volts
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 4
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Dissipation Per Transistor @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case, Single Transistor
Designed for broadband commercial and industrial applications with frequen-
Output Power
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
Characteristic
Freescale Semiconductor, Inc.
C
Rating
For More Information On This Product,
= 25°C
Go to: www.freescale.com
Symbol
Symbol
V
R
V
T
P
T
DSS
stg
θJC
GS
D
J
GATE1
GATE3
GATE2
NOTE: Exposed backside flag is source
N.C.
N.C.
N.C.
N.C.
N.C.
MRF9002R2
LATERAL N - CHANNEL
RF POWER MOSFET
PIN CONNECTIONS
terminal for transistors.
1.0 GHz, 2 W, 26 V
1
2
3
4
5
6
7
8
- 65 to +150
BROADBAND
- 0.5, + 15
CASE 978 - 03
Value
Value
150
(Top View)
65
12
PLASTIC
4
PFP - 16
Order this document
by MRF9002R2/D
16
15
14
13
12
10
11
9
MRF9002R2
DRAIN 1−1
DRAIN 1−2
DRAIN 2−1
DRAIN 2−2
N.C.
DRAIN 3−1
DRAIN 3−2
N.C.
Watts
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9002R2 Summary of contents

Page 1

... Motorola, Inc. 2004 For More Information On This Product, Symbol V DSS stg T J Symbol R θJC Go to: www.freescale.com Order this document by MRF9002R2/D MRF9002R2 1.0 GHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 978 - 03 PLASTIC PFP - 16 PIN CONNECTIONS 1 16 DRAIN 1−1 N.C. N. DRAIN 1−2 ...

Page 2

... Power Output Compression Point ( Vdc mA 960.0 MHz Output Mismatch Stress ( Vdc CW mA, DD out 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) MRF9002R2 2 = 25°C unless otherwise noted) C Symbol Min V GS(th) V GS(Q) V DS(on η IRL ...

Page 3

... C1 V GS2 Z6 RF2 INPUT C3 V GS3 Z11 RF3 INPUT C5 Figure 1. MRF9002R2 Broadband Test Circuit Schematic Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values Designators C12 C13 C14, C15 C16, C17 C18 Z1, Z11 Z2, Z7, Z12 Z3, Z8, Z13 Z4, Z14 ...

Page 4

... C1 V GS1 V GS2 C9 L2 RF2 INPUT C3 C13 MRF9002 960 MHz Rev GS3 C5 RF3 INPUT Figure 2. MRF9002R2 Broadband Test Circuit Component Layout MRF9002R2 4 C16 C7 C14 L1 R1 Pin C15 C11 C17 For More Information On This Product, Go to: www.freescale.com RF1 OUTPUT ...

Page 5

... Single−Tone OUTPUT POWER (dBm) out Vdc 960.0 MHz 960.1 MHz OUTPUT POWER (dBm) PEP out Output Power Vdc Single−Tone 945 955 965 975 f, FREQUENCY (MHz) MRF9002R2 40 40 985 5 ...

Page 6

... Freescale Semiconductor, Inc Figure 9. Capacitance versus Drain Source Voltage MRF9002R2 6 TYPICAL CHARACTERISTICS DRAIN SOURCE SUPPLY (VOLTS) DS For More Information On This Product, Go to: www.freescale.com C iss C oss C rss 29 30 MOTOROLA RF DEVICE DATA ...

Page 7

... Test circuit impedance as measured load from drain to ground. Z load Ω Input Matching Network Z load Ω to: www.freescale.com TRANSISTOR Ω 985 MHz Z source f = 925 MHz 985 MHz Z load 925 MHz Output Device Matching Under Test Network Z source load MRF9002R2 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF9002R2 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9002R2 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF9002R2 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... A2 1.950 2.100 S D 6.950 7.100 D1 4.372 5.180 E 8.850 9.150 E1 6.950 7.100 E2 4.372 5.180 L 0.466 0.720 L1 0.250 BSC b 0.300 0.432 b1 0.300 0.375 c 0.180 0.279 c1 0.180 0.230 e 0.800 BSC h −−− 0.600 aaa 0.200 bbb 0.200 ccc 0.100 MRF9002R2 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA MRF9002R2/D ...

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