K1304 Renesas Technology, K1304 Datasheet

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K1304

Manufacturer Part Number
K1304
Description
Search -----> 2SK1304
Manufacturer
Renesas Technology
Datasheet
2SK1304
Silicon N Channel MOS FET
Application
High speed power switching
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 6
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Can be driven from 5 V source
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
S
D
(Previous: ADE-208-1262)
1. Gate
2. Drain
3. Source
(Flange)
REJ03G0923-0200
www.DataSheet4U.com
Sep 07, 2005
Rev.2.00

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K1304 Summary of contents

Page 1

... Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Rev ...

Page 2

... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle ° 2. Value Electrical Characteristics Item Drain to source breakdown voltage ...

Page 3

... Main Characteristics Power vs. Temperature Derating 120 Case Temperature T Typical Output Characteristics 100 3 2 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage V Rev.2.00 Sep 07, 2005 page ...

Page 4

... Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0. 0. 0.04 0. – Case Temperature T Body to Drain Diode Reverse Recovery Time 500 di/ 200 Pulse Test 100 0.5 1 Reverse Drain Current I Dynamic Input Characteristics ...

Page 5

... 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin = 10 V Rev.2.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 50 Pulse Test – 0.4 0.8 1.2 Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width ...

Page 6

... RENESAS Code SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SK1304-E 30 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± ...

Page 7

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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