K1358 Toshiba Semiconductor, K1358 Datasheet - Page 2

• Manufacturer Part Number: K1358
• Description: Search -----> 2SK1358
• Manufacturer: Toshiba Semiconductor

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2SK1358
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Electrical Characteristics (Ta = 25 C)
Source-Drain Diode Ratings and Characteristics (Ta = 25 C)
Gate Leakage Current
Drain Cut-off Current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching
Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
CHARACTERISTICS
CHARACTERISTIC
Rise Time
Turn-on Time
Fall Time
Turn-off Time
SYMBOL
SYMBOL
V
R
(BR) DSS
DS (ON)
C
I
C
C
V
I
Q
Q
GSS
V
I
Y
t
t
Q
DSS
I
DRP
oss
t
on
t
off
DSF
iss
rss
DR
th
gs
gd
fs
r
f
g
V
V
I
V
I
V
V
V
I
I
D
D
f = 1MHz
D
DR
GS
DS
DS
DS
DS
DD
= 10mA, V
= 4A, V
= 9A
= 9A, V
= 25V, V
= 720V, V
= 10V, I
= 20V, I
= 25V, V
= 400V, V
GS
GS
D
D
GS
GS
= 10V
TEST CONDITION
= 1mA
= 4A
TEST CONDITION
GS
GS
DS
= 0V
= 0V,
= 0V
= 0V
= 10V,
= 0V
–
–
MIN.
MIN.
900
1.5
2.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
TYP.
TYP.
1300
100
180
100
120
1.1
4.0
25
40
20
70
50
–
–
–
–
–
–
–
MAX.
MAX.
1800
-2.0
300
150
260
200
240
3.5
1.4
50
80
40
100
27
–
–
–
–
9
UNIT
UNIT
nA
pF
nC
ns
V
V
S
A
A
V
A
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