LM3433SQ-36AEV National Semiconductor, LM3433SQ-36AEV Datasheet - Page 5

• Manufacturer Part Number: LM3433SQ-36AEV
• Description: LM3433 Common Anode Capable High Brightness LED Driver with High Frequency Dimming; ; Qty per Container: 1
• Manufacturer: National Semiconductor

R
R
FUNCTIONAL CONTROL
V
V
V
R
V
R
I
I
R
AC SPECIFICATIONS
T
T
THERMAL SPECIFICATIONS
T
T
θ
ADJ
SS
JA
DTD
PDIM
JLIM
JLIM(hyst)
INUVLO
CCUVLO
EN
DIM
OLP
OHP
EN
DIM
SS
Symbol
Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended
to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The HS pin can go to -6V with respect to V
Note 3: The maximum allowable power dissipation is a function of the maximum junction temperature, T
θ
θ
shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
Note 4: Human Body Model, applicable std. JESD22-A114-C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device Model, applicable
std. JESD22-C101-C.
Note 5: All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits are 100%
production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used
to calculate Average Outgoing Quality Level (AOQL).
Note 6: Typical numbers are at 25°C and represent the most likely norm.
JA
JA
, and the ambient temperature, T
. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal
DIMO output low resistance
DIMO output high resistance
V
V
thresholds
Enable threshold, with respect
to CGND
Enable pin pullup resistor
DIM logic input threshold
DIM pin pulldown resistor
ADJ pin current
SS pin source current
SS pin pulldown resistance
LO and HO dead time
DIM to DIMO propagation
delay
Junction temperature thermal
limit
Thermal limit hysteresis
LLP-24 package thermal
resistance
IN
CC
undervoltage lockout
- V
EE
Parameter
undervoltage lockout
A
. The maximum allowable power dissipation at any ambient temperature is calculated using: P
EE
for 30ns and +22V with respect to V
I = 5mA source
I = 5mA sink
With respect to CGND
On Threshold
Off threshold
Device on w.r.t. CGND
Device off w.r.t. CGND
DIM rising threshold w.r.t.
CGND
DIM falling threshold w.r.t.
CGND
EN = CGND
LO falling to HO rising dead
time
HO falling to LO rising dead
time
DIM rising to DIMO rising delay
DIM falling to DIMO falling
delay
JEDEC 4 layer board
Conditions
5
EE
for 50ns without sustaining damage.
Min(Note 5) Typ(Note 6) Max(Note 5)
J
=175°C (typ.) and disengages at T
-1.0
6.0
4.9
0.6
0.6
J
(MAX), the junction-to-ambient thermal resistance,
100
100
175
1.4
6.6
5.4
1.0
20
30
10
26
28
68
58
20
39
D
J
(MAX) = (T
=155°C (typ).
124
160
7.0
5.8
1.6
1.6
1.0
J(MAX)
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− T
Units
°C/W
kΩ
kΩ
µA
µA
kΩ
ns
ns
°C
°C
Ω
V
V
V
V
A
)/