SSM3J15TE Toshiba Semiconductor, SSM3J15TE Datasheet
SSM3J15TE
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SSM3J15TE Summary of contents
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... Rating − ±20 V GSS −100 I D −200 100 D T 150 ch −55~150 T stg Equivalent Circuit (top view SSM3J15TE Unit °C 1: Gate °C 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-1B1B Weight: 0.0022 g(typ.) 2007-11-01 Unit: mm ...
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... off ( OUT OUT V requires higher voltage than V GS (on) < V < (off (on) 2 SSM3J15TE MIN. TYP. MAX ⎯ ⎯ ± −30 ⎯ ⎯ ⎯ ⎯ −1 −1.1 ⎯ −1.7 ⎯ ⎯ −4 V ⎯ ...
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... VGS=-2.3V -0.01 -1 -1.5 -2 Common Source Ta=25°C -4V -100 -1000 -4V,-10mA 75 100 125 150 3 SSM3J15TE ID - VGS Common Source VDS=-3V Ta=100°C -10 25°C -1 -25° Gate-Source Voltage VGS(V) RDS(ON) - VGS 20 18 Source Common ID= -1mA Ta=100° ...
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... Common Source VDS= -3V Ta=25°C -100 -1000 10000 Common Source VGS=0V f=1MHz Ta=25°C Ciss Coss Crss -10 -100 100 120 140 160 4 SSM3J15TE IDR - VDS -250 Common Source VGS=0V -200 Ta=25°C -150 -100 - 0.2 0.4 0.6 0.8 Drain-Source voltage VDS ( Common Source VDD= -5V toff VGS=0~-5V Ta=25° ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J15TE 20070701-EN GENERAL 2007-11-01 ...