SSM3J15TE Toshiba Semiconductor, SSM3J15TE Datasheet - Page 2

• Manufacturer Part Number: SSM3J15TE
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Switching Time Test Circuit
.
Precaution
product. For normal switching operation, V
than V
Please take this into consideration for using the device.
V
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as voltage between gate and source when low operating current value is I
th
−
. (Relationship can be established as follows: V
5V
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
Characteristic
: t
= −5 V
r
= 50 Ω)
, t
f
< 5 ns
Turn-on time
Turn-off time
IN
(Ta = 25°C)
R
V
OUT
GS (on)
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
on
off
oss
rss
iss
th
fs
requires higher voltage than V
⎪
GS (off)
V
I
V
V
V
I
I
V
V
V
(b) V
(c) V
D
D
D
GS
DS
DS
DS
DS
DD
GS
= −0.1 mA, V
= −10 mA, V
= −1 mA, V
2
= −30 V, V
= −3 V, I
= −3 V, I
= −3 V, V
= ±16 V, V
= −5 V, I
= 0~−5 V
OUT
IN
< V
Test Condition
th
D
D
D
GS
< V
GS
GS
= −0.1 mA
= −10 mA
DS
GS
= −10 mA,
GS
V
= −2.5 V
= 0, f = 1 MHz
GS (on)
V
= −4 V
DD
= 0
= 0
= 0
DS (ON)
−5 V
0 V
)
th
and V
t
on
GS (off)
10%
MIN.
−1.1
−30
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
r
90%
10%
requires lower voltage
D
TYP.
175
9.1
3.5
8.6
14
65
⎯
⎯
⎯
⎯
⎯
8
= −100 μA for this
SSM3J15TE
t
90%
off
2007-11-01
MAX.
−1.7
12
32
⎯
⎯
±1
⎯
−1
⎯
⎯
⎯
⎯
t
f
UNIT
mS
μA
μA
pF
pF
pF
ns
Ω
V
V