SSM3K16FV Toshiba Semiconductor, SSM3K16FV Datasheet
SSM3K16FV
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SSM3K16FV Summary of contents
Page 1
... DS ±10 V GSS I 100 D I 200 DP P (Note 1) 150 D T 150 ch −55~150 T stg 0.45mm 0.45mm Equivalent Circuit SSM3K16FV 1.2±0.05 0.8±0. Unit 1.Gate mW 2.Source °C VESM 3.Drain °C JEDEC - JEITA - TOSHIBA 2-1L1B Weight: 0.0015 g (typ.) 2007-11-01 nit ...
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... mA 0~2 off ( OUT (c) V OUT V DD requires a higher voltage than V GS (on) < V < (off SSM3K16FV Min Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.6 ⎯ ⎯ 1.5 = 2.5 V ⎯ 2.2 = 1.5 V ⎯ 5 MHz ⎯ ...
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... Ta = 25°C 1.9 1 1.5 2 – Common source Ta = 25°C 100 1000 – 100 125 150 3 SSM3K16FV I – 1000 Common source 100 Ta = 100°C 10 25°C −25°C 1 0.1 0. Gate-Source voltage V GS (V) R – V ...
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... Ambient temperature Ta (°C) ⎪ – 100 1000 I D (mA iss C oss C rss 100 – 100 120 140 160 4 SSM3K16FV I – 250 Common source 25°C 200 D 150 100 50 0 −0.2 −0.4 −0.6 −0.8 −1 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K16FV 20070701-EN GENERAL 2007-11-01 ...