SSM3K16FV Toshiba Semiconductor, SSM3K16FV Datasheet - Page 2

• Manufacturer Part Number: SSM3K16FV
• Description: Silicon N Channel MOS Type High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
V
Please take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as the voltage between gate and source when the low operating current value is I
2.5 V
Characteristics
th.
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
: t
Turn-on time
Turn-off time
= 3 V
r
= 50 Ω)
, t
f
< 5 ns
IN
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
R
V
rss
iss
th
fs
OUT
DD
L
GS (on)
⏐
GS (off)
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
requires a higher voltage than V
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
= 1 mA, V
< V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ±10 V, V
= 3 V, I
= 0~2.5 V
(b) V
(c) V
2
th
< V
D
D
D
Test Condition
GS
OUT
IN
GS
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
= 10 mA,
GS
GS (on)
DS
= 1.5 V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4 V
= 2.5 V
= 0
= 0
= 0
V
)
DS (ON)
V
2.5 V
DD
0 V
th
and V
t
on
10%
Min
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
r
GS (off)
10%
90%
Typ.
125
1.5
2.2
5.2
9.3
4.5
9.8
70
⎯
⎯
⎯
⎯
⎯
SSM3K16FV
requires a lower
t
90%
off
2007-11-01
D =
Max
1.1
3.0
4.0
±1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
t
f
100 μA for
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V