AO4707 Alpha & Omega Semiconductors, AO4707 Datasheet - Page 2

• Manufacturer Part Number: AO4707
• Description: P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductors

Alpha & Omega Semiconductor, Ltd.
AO4707
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
SCHOTTKY PARAMETERS
V
I
C
A: The value of R
The value in any given application depends on the user's specific board design. The current rating is based on the t ^ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 Ps pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
rm
Rev4: August 2005
FS
GS(th)
SD
F
DS(ON)
iss
oss
rss
g
T
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
TJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
Forward Voltage Drop
Maximum reverse leakage current
Junction Capacitance
TJA
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
I
V
V
V
V
FR-4 board with 2oz. Copper, in a still air environment with T
D
S
F
F
F
2
DS
DS
DS
GS
GS
GS
DS
=-1A,V
GS
GS
GS
GS
=-8A, dI/dt=100A/Ps
=-8A, dI/dt=100A/Ps
=3.0A
R
R
R
R
=-250PA, V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
=24V
=24V, T
=24V, T
=15V
=-24V, V
=0V, V
=V
=-5V, I
=-10V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3:
GS
TJL
GS
I
and lead to ambient.
D
D
GS
DS
DS
J
J
=0V
=-250PA
=-8A
=125°C
=150°C
D
D
GS
DS
DS
DS
=±20V
=-8A
=-15V, f=1MHz
=0V, f=1MHz
GS
=-5A
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
T
=-8A
L
T
J
=1.8:,
=125°C
J
=55°C
-1.2
Min
-30
40
-0.76
24.5
14.5
18.4
18.9
21.5
12.5
0.48
0.07
Typ
920
190
122
120
3.6
9.3
2.7
4.9
7.1
3.4
8.4
4.2
33
41
15
-2
A
=25°C. The
±100
A
Max
0.52
0.15
-2.4
-4.2
=25°C.
33
56
20
60
-1
-5
-1
Units
m:
m:
mA
nC
nC
nC
nC
nC
PA
nA
pF
pF
pF
pF
ns
ns
ns
ns
ns
:
V
V
A
S
V
A
V