BUK483-60A Philips Semiconductors, BUK483-60A Datasheet - Page 3

• Manufacturer Part Number: BUK483-60A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1995
PowerMOS transistor
ID% = 100 I
1E+02
1E+01
1E+00
1E-01
1E-02
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
1E-07
Fig.1. Normalised power dissipation.
Fig.3. Transient thermal impedance.
0
0
PD%
ID%
Zth j-amb / (K/W)
0.05
0.02
D =
0.5
0.2
0.1
Z
PD% = 100 P
0
th j-amb
D
20
20
/I
1E-05
D 25 ˚C
= f(t); parameter D = t
40
40
= f(T
1E-03
60
60
amb
D
Tamb / C
Tamb / C
/P
t / s
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
1E-01
P
= f(T
D
100
100
t
1E+01
p
amb
T
120
120
p
/T
)
BUKX83
D =
GS
140
140
T
t
1E+03
p
t
10 V
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
I
D
& I
Fig.4. Safe operating area T
0.01
100
0.1
1.2
0.8
0.6
0.4
0.2
10
10
9
8
7
6
5
4
3
2
1
0
DM
1
0
1
0.1
0
0
ID / A
ID / A
RDS(ON) / Ohm
= f(V
R
4
I
DS(ON)
D
= f(V
DS
20
2
); I
0.5
VGS / V = 4.5
1
= f(I
DM
DS
10
); parameter V
DC
D
single pulse; parameter t
7
4
); parameter V
VDS / V
VDS / V
5
ID / A
10
1
6
VGS / V = 5
6
Product specification
BUK483-60A
1.5
100 us
amb
tp = 10 us
1 ms
10 ms
100 ms
1 s
10 s
100
BUK483-60A
4
GS
8
6
= 25 ˚C
GS
j
j
= 25 ˚C .
7
= 25 ˚C .
10
Rev 1.200
2
p