BUK483-60A Philips Semiconductors, BUK483-60A Datasheet - Page 4

• Manufacturer Part Number: BUK483-60A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1995
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
1.5
1.0
0.5
= f(V
0
Fig.7. Typical transfer characteristics.
DS(ON)
-60 -40 -20
10
10
a
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
GS
0
0
g
ID / A
gfs / S
) ; conditions: V
fs
/R
= f(I
DS(ON)25 ˚C
Tj / C = 150
2
2
D
); conditions: V
0
20
= f(T
4
4
VGS / V
Tj / C
ID / A
40
DS
j
); I
25
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
60
D
6
6
= 3.2 A; V
DS
80 100 120 140
= 25 V
8
8
j
= 25 ˚C .
GS
10
10
= 10 V
j
4
V
Fig.12. Typical capacitances, C
10000
C = f(V
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
4
3
2
1
0
D
100
-60
10
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
1
0
20
2 %
20
max.
typ.
min.
Tj / C
40
SUB-THRESHOLD CONDUCTION
VDS / V
2
VGS / V
j
GS
= 25 ˚C; V
60
D
= 1 mA; V
= 0 V; f = 1 MHz
typ
80
Product specification
3
BUK483-60A
100 120 140
iss
, C
98 %
40
DS
BUK4y3-50
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.200
GS
rss
GS
.