HAT2099H Renesas Technology, HAT2099H Datasheet

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HAT2099H

Manufacturer Part Number
HAT2099H
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
HAT2099H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Rev.5.00 Sep 07, 2005 page 1 of 7
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS (on)
= 2.9 m typ. (at V
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
GS
= 10 V)
5
1 2
3 4
G
4
D
S S S
5
1 2 3
(Previous: ADE-208-1432C)
1, 2, 3
4
5
REJ03G1187-0500
Source
Gate
Drain
Sep 07, 2005
Rev.5.00

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HAT2099H Summary of contents

Page 1

... HAT2099H Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive www.DataSheet4U.com Low drive current High density mounting Low on-resistance R = 2.9 m typ. ( (on) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) Rev.5.00 Sep 07, 2005 page ...

Page 2

... HAT2099H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Notes duty cycle Value at Tch = ...

Page 3

... HAT2099H Main Characteristics Power vs. Temperature Derating www.DataSheet4U.com Case Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 0.16 0.12 0.08 0. Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 100 150 200 Tc (° ...

Page 4

... HAT2099H Static Drain to Source on State Resistance 20 Pulse Test 4 www.DataSheet4U.com 0 –40 0 Case Temperature Body-Drain Diode Reverse 1000 500 200 100 0.1 0.3 Reverse Drain Current Dynamic Input Characteristics Gate Charge Rev.5.00 Sep 07, 2005 page ...

Page 5

... HAT2099H Reverse Drain Current vs. Source to Drain Voltage www.DataSheet4U.com 0 0 0.4 Source to Drain Voltage 3 1 0.3 0.1 0.03 0.01 10 µ Avalanche Test Circuit V DS Monitor Vin 50 Ω Rev.5.00 Sep 07, 2005 page Pulse Test 0.8 1.2 1.6 2.0 V (V) SDF Normalized Transient Thermal Impedance vs. Pulse Width ...

Page 6

... HAT2099H Switching Time Test Circuit Vin Monitor Rg Vin 10 V www.DataSheet4U.com Rev.5.00 Sep 07, 2005 page Vout Monitor D.U. Vout d(on) Switching Time Waveform 90% 10% Vin 10% 10% 90% 90 d(off ...

Page 7

... Package Dimensions JEITA Package Code SC-100 www.DataSheet4U.com Ordering Information Part Name HAT2099H-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page RENESAS Code Package Name MASS[Typ ...

Page 8

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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