BTS412B2 Siemens Semiconductor Group, BTS412B2 Datasheet - Page 8

• Manufacturer Part Number: BTS412B2
• Description: Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
• Manufacturer: Siemens Semiconductor Group

V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
Semiconductor Group
E
V
=
bb
AS
bb
high
E
= E
disconnect with charged external
AS
E
bb
=
bb
2
+ E
2
4
I
L
·
R
·
IN
ST
L
S
L
L
·
(
- E
V
IN
S T
bb
PROFET
R
= V
GND
3
1
+ |V
V
bb
E
PROFET
L
OUT(CL)
G N D
ON(CL)
=
V
b b
1 /
OUT
2
·
L
·
|)
i
·
L
I
·
5
(t) dt,
O U T
2
L
ln
L
(1+
E A S
Z L
0 :
{
|V
R L
OUT(CL)
L
I
L
·
R
L
E
E
|
E Load
R
)
L
D
8
Maximum allowable load inductance for
a single switch off
L = f (I
L [mH]
Typ. transient thermal impedance chip case
Z
Z
V
thJC
thJC
bb
10000
0.01
= 12 V, R
1000
0.1
= f (t
[K/W]
10
100
L
1
1E-5
10
); T
1
p
, D), D=t
1
j,start
L
1E-4
= 0
= 150°C, T
2
p
/T
1E-3
C
3
1E-2
= 150°C const.,
1E-1
4
BTS 412B2
1E0
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
5
1E1
I L [A]
t p [s]
6