BTS425L1 Siemens Semiconductor Group, BTS425L1 Datasheet - Page 4

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BTS425L1

Manufacturer Part Number
BTS425L1
Description
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Manufacturer
Siemens Semiconductor Group
Datasheet
Parameter and Conditions
at T
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
Repetitive short circuit shutdown current limit
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
Reverse battery voltage drop
Diagnostic Characteristics
Open load detection current
Open load detection voltage
Internal output pull down
9
10)
Semiconductor Group
)
(on-condition, )
I
(pin 5 to 1), V
L
T
j
= -2 A
Requires 150
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
External pull up resistor required for open load detection in off state.
= 25 °C, V
j
= T
jt
(see timing diagrams, page 9)
bb
OUT
= 12 V unless otherwise specified
resistor in GND connection. The reverse load current through the intrinsic drain-source
=5 V, T
j
=-40..150°C
10
9
)
(V
) (off-condition)
out
> V
T
T
bb
j
=-40..150°C:
j
=25..150°C:
T
)
j
T
T
T
=+150°C:
T
j
=150 °C: -V
j
j
=-40 °C
j
=-40°C:
=25°C:
4
:
I
I
T
- V
I
V
R
Symbol
L(SCp)
L(SCr)
L (OL)
jt
T
OUT(OL)
O
bb
ON(rev)
jt
150
150
150
min
27
20
12
--
--
--
--
2
4
Values
610
600
450
typ
37
30
18
17
10
10
--
--
3
BTS 425 L1
max
950
750
47
40
25
32
30
--
--
--
--
4
Unit
mV
mA
k
°C
A
A
K
V
V

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