BTS770G Siemens Semiconductor Group, BTS770G Datasheet - Page 14

• Manufacturer Part Number: BTS770G
• Description: TrilithIC Quad switch driver
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics (cont’d)
I
unless otherwise specified
Parameter
Output Stages
Leakage current
of highside switch
Leakage current
of lowside switch
Clamp-diode
of highside switch;
Forward-Voltage
Clamp-diode leakage-
current (
of highside switch
Clamp-diode
of lowside switch;
forward-voltage
Static drain-source
on-resistance
of highside switch
Static drain-source
on-resistance
of lowside switch
Static path on-resistance
Note: The listed characteristics are ensured over the operating range of the integrated
SH1
=
I
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at
the given supply voltage.
SH2
I
FH
=
+
I
SL1
I
SH
=
)
I
SL2
= 0 A; – 40 C <
Symbol
I
I
V
I
V
R
R
R
HSLK
LSLK
LKCL
FH
FL
DS ON H
DS ON L
DS ON
T
min.
–
–
–
–
–
–
–
–
j
< 150 C; 8 V >
14
Limit Values
typ.
5
20
0.8
2
0.8
165
45
–
max.
12
100
1.5
10
1.5
220
65
500
V
S
> 18 V
Unit Test Condition
V
mA
V
m
m
m
A
A
V
V
V
I
I
I
I
T
I
V
T
R
I
FH
FH
FL
SH
SL
SH
j
j
GH
GL
DS
GL
DS ON H
= 25 C
= 25 C
= 3 A
= 1 A;
= 3 A
= 3 A
= 1 A
= 1 A
= 0 V
= 5 V
= 18 V
=
T
V
A
BTS 770 G
SH
+
= 25 C and
1999-01-07
R
= 0 V
DS ON L
;