MTD2N40E Motorola, MTD2N40E Datasheet

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MTD2N40E

Manufacturer Part Number
MTD2N40E
Description
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
Manufacturer
Motorola
Datasheet

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MTD2N40E
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS
High Energy Power FET
DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche and switch efficiently. This
new high energy device also offers a drain–to–soure diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and
other inductive loads, the avalanche energy capability is specified
to eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous @ T C = 25 C
Drain Current
Drain Current
Total Power Dissipation @ T C = 25 C
Total Power Dissipation @ T C = 25 C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high voltage TMOS E–FET is designed to
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
Replaces MTD1N40E
Derate above 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, I L = 3.0 Apk, L = 10 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
E-FET.
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
Rating
10 ms)
G
D
S
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTD2N40E
CASE 369A–13, Style 2
TMOS POWER FET
R DS(on) = 3.5 OHM
Motorola Preferred Device
– 55 to 150
2.0 AMPERES
400 VOLTS
Value
0.32
1.75
3.13
71.4
400
400
100
260
2.0
1.5
6.0
Order this document
40
45
20
40
DPAK
by MTD2N40E/D
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTD2N40E Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 G Rating 10 ms) Order this document by MTD2N40E/D MTD2N40E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS R DS(on) = 3.5 OHM CASE 369A–13, Style 2 ...

Page 2

... MTD2N40E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 400 Vdc Vdc 400 Vdc Vdc 125 C) Gate–Body Leakage Current ( Vdc ...

Page 3

... Figure 4. On–Resistance versus Drain Current 1000 100 10 100 125 150 0 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTD2N40E 100 – 1.5 2 2 DRAIN CURRENT (AMPS) ...

Page 4

... MTD2N40E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous current ( accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated. MTD2N40E t d(off d(on) 10 ...

Page 6

... MTD2N40E SINGLE PULSE 100 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 Figure 14. Diode Reverse Recovery Waveform ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTD2N40E Board Material = 0.0625 G–10/FR– Copper 5.0 Watts ...

Page 8

... MTD2N40E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile MTD2N40E STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 ––– 0.51 ––– V 0.030 0.050 0.77 1.27 Z 0.138 ––– 3.51 ––– MTD2N40E/D ...

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