MTD2N40E Motorola, MTD2N40E Datasheet - Page 3

• Manufacturer Part Number: MTD2N40E
• Description: TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
3.2
2.4
1.6
0.8
4
0
8
6
4
2
0
2.5
1.5
0.5
0
2
1
0
0
– 50
T J = 25 C
V GS = 10 V
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
I D = 1 A
Figure 5. On–Resistance Variation with
– 25
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
1
100 C
T J , JUNCTION TEMPERATURE ( C)
0
I D , DRAIN CURRENT (AMPS)
T J = 25 C
and Temperature
25
8
–55 C
Temperature
2
50
12
TYPICAL ELECTRICAL CHARACTERISTICS
75
3
100
V GS = 10 V
16
125
7 V
6 V
5 V
8 V
20
150
4
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
10
4
3
2
1
0
2
0
0
V DS 10 V
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
T J = 25 C
0.5
Figure 6. Drain–To–Source Leakage
3
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
1
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
V GS = 10 V
4
T J = 100 C
and Gate Voltage
1.5
T J = 125 C
15 V
200
5
2
–55 C
2.5
6
25 C
300
MTD2N40E
3
7
3.5
3
400
8
4