RJK03B9DPA Renesas Technology, RJK03B9DPA Datasheet

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RJK03B9DPA

Manufacturer Part Number
RJK03B9DPA
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet

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RJK03B9DPA
Silicon N Channel Power MOS FET
Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
 Pb-free
 Halogen-free
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
REJ03G1791-0320 Rev.3.20
May 12, 2010
R
DS(on)
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
= 8.3 m
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
Item
typ. (at V
5
6
GS
7
= 10 V)
8
4
3
2 1
I
ch-c
D(pulse)
E
Pch
Symbol
I
AP
AR
V
V
Tstg
Tch
I
GSS
I
DSS
DR
Note 2
D
Note 2
Note3
G
4
Note3
Note1
D
S S S
5 6 7 8
1 2 3
D D D
–55 to +150
Ratings
150
±20
120
6.4
30
30
30
25
8
5
Preliminary
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1791-0320
Source
Gate
Datasheet
C/W
Unit
May 12, 2010
mJ
C
C
W
V
V
A
A
A
A
(Ta = 25°C)
Page 1 of 6
Rev.3.20

Related parts for RJK03B9DPA

RJK03B9DPA Summary of contents

Page 1

... RJK03B9DPA Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  8.3 m typ. (at V DS(on)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DC-A ...

Page 2

... RJK03B9DPA Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge ...

Page 3

... RJK03B9DPA Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics 20 4 3.0V 2 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage 400 300 200 100 Gate to Source Voltage V REJ03G1791-0320 Rev.3.20 ...

Page 4

... RJK03B9DPA Static Drain to Source On State Resistance vs. Temperature 20 Pulse Test 4 – Case Temperature Tc (°C) Dynamic Input Characteristics Gate Charge Qg (nc) Maximum Avalanche Energy vs. ...

Page 5

... RJK03B9DPA Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 Avalanche Test Circuit V DS Monitor Rg Vin 15 V Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1791-0320 Rev.3.20 May 12, 2010 θch – c(t) = γs (t) • θch – c θch – 5.0°C/ 25° ...

Page 6

... RJK03B9DPA Package Dimensions Package Name JEITA Package Code RENESAS Code ⎯ WPAK(2) PWSN0008DC-A 5.1 ± 0.2 1.27Typ 0.545Typ 4.90 ± 0.1 Ordering Information Part No. RJK03B9DPA-00-J53 3000 pcs REJ03G1791-0320 Rev.3.20 May 12, 2010 Previous Code MASS[Typ.] WPAK(2)V 0.07g 0.8Max 0.04Min 0.2Typ (Ni/Pd/Au plating) Quantity Taping Preliminary Unit ...

Page 7

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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