RJK2006DPF Renesas Technology, RJK2006DPF Datasheet
RJK2006DPF
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RJK2006DPF Summary of contents
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... RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline LDPAK G Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current www.DataSheet4U.com Drain peak current Body-Drain diode reverse Drain current ...
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... RJK2006DPJ, RJK2006DPE, RJK2006DPF Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ...
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... RJK2006DPJ, RJK2006DPE, RJK2006DPF Package Dimensions RJK2006DPJ 2.54 ± 0.5 RJK2006DPE 10.2 ± 0.3 www.DataSheet4U.com 1.3 ± 0.2 2.54 ± 0.5 Rev.1.00, Jan.14.2005, page 10.2 ± 0.3 1.3 ± 0.2 1.37 ± 0.2 + 0.2 0.86 – 0.1 0.76 ± 0.1 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 + 0.2 0.1 – 0.1 1.37 ± 0.2 0.4 ± 0.1 + 0.2 0.86 – 0.1 2.54 ± 0 January, 2003 Unit: mm 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 0.4 ± 0.1 Package Code ...
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... RJK2006DPJ, RJK2006DPE, RJK2006DPF RJK2006DPF 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Ordering Information Part Name RJK2006DPE-TL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. www.DataSheet4U.com Rev.1.00, Jan.14.2005, page 4.44 ± 0.2 1.3 ± 0.15 2.49 ± ...
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... Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp third party. ...