RJK2055DPA Renesas Technology, RJK2055DPA Datasheet - Page 2

• Manufacturer Part Number: RJK2055DPA
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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RJK2055DPA
Electrical Characteristics
Notes: 4. Pulse test
REJ03G1735-0100 Rev.1.00 Sep 16, 2008
Page 2 of 3
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
V
GS(off)
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
r
f
Min
200
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.054
2400
11.5
0.91
Typ
245
145
55
37
17
64
17
38
—
—
—
—
9
0.069
Max
1.40
4.5
±1
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
V
V
A
A
I
V
V
V
I
V
V
f = 1 MHz
I
V
R
Rg = 10
V
V
I
I
I
di
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 20 A, V
= 20 A, V
= 10 mA, V
= 10 A, V
= 10 A
= 20 A
/dt = 100 A/ s
= 10
= 200 V, V
= 30 V, V
= 10 V, I
= 25 V
= 0
= 10 V
= 160 V
= 10 V
Test conditions
GS
GS
GS
D
GS
= 1 mA
= 0
= 0
= 10 V
GS
DS
= 0
= 0
= 0
(Ta = 25°C)
Note4
Note4