STW5NB100 ST Microelectronics, STW5NB100 Datasheet - Page 3

• Manufacturer Part Number: STW5NB100
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

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DataSheet
4
U
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
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Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 4 A
= 4.3 A
= 500 V
= 800 V
= 800 V I
= 100 V
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Test Conditions
Test Conditions
Test Conditions
V
D
GS
= 4 A V
di/dt = 100 A/ s
= 0
T
j
= 150
GS
V
I
D
I
V
GS
D
= 4 A
GS
= 10 V
= 2 A
o
= 10 V
C
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
14.5
750
5.4
20
32
12
11
15
12
20
9
STW5NB100
Max.
Max.
Max.
4.3
1.6
28
13
45
21
17
28
17
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/5