IRC4BC40F International Rectifier, IRC4BC40F Datasheet - Page 2

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IRC4BC40F

Manufacturer Part Number
IRC4BC40F
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
International Rectifier
Datasheet
Notes:
Q
R
S
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
d(off)
f
d(on)
d(off)
f
r
r
fe
E
(BR)CES
(BR)ECS
on
off
ts
CE(ON)
GE(th)
ts
ies
oes
res
g
gc
ge
(BR)CES
GE(th)
2
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 10Ω,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
9.2
18
2200
T
U
1.85
1.56
0.37
1.81
2.18
0.70
1.50
100
240
170
380
310
140
-12
3.9
7.5
12
15
35
26
18
25
21
29
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1000
±100
250
150
360
250
1.7
6.0
2.0
2.8
23
53
mV/°C V
V/°C
µA
ns
nA
nC
mJ
mJ
nH
ns
pF
V
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T
I
V
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
C
CC
GE
GE
GE
GE
CC
C
C
= 27A
= 25°C
= 27A, V
= 150°C,
= 27A, V
= 27A , T
= 27A
= 49A
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 15V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
C
C
CE
CE
CC
CC
J
= 250µA
= 1.0A
= 1.0mA
= 150°C
C
= 250µA
= 250µA
G
G
= 600V, T
= 10V, T
= 600V
= 480V
= 480V
= 27A
= 10Ω
= 10Ω
See Fig. 8
See Fig. 7
J
J
= 25°C
V
See Fig.2, 5
= 150°C
www.irf.com
GE
= 15V

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