BUZ100L Siemens Semiconductor Group, BUZ100L Datasheet - Page 6

• Manufacturer Part Number: BUZ100L
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
=
140
120
110
100
2 x I
V
90
80
70
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
A
A
0
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
)
P
D
tot
1
p
x R
= 250W
p
= 80 µs
= 80 µs
2
DS(on)max
3
l
k
j
i
4
h
5
g
6
D
= f ( V
7
e
c
a
d
b
f
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
GS
V
V
DS
)
V
V
GS
10.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
5.0
10
6
Drain-source on-resistance
R
parameter: I
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.050
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2 x I
60
50
45
40
35
30
25
20
15
10
S
5
0
-60
0
= ( T
D
D
x R
p
j
-20
10
)
= 30 A, V
= 80 µs,
DS(on)max
20
20
GS
98%
typ
60
30
= 5 V
100
40
fs
BUZ 100L
07/96
= f
°C
A
T
I
j
( I
D
D
)
180
60