BUZ102 Siemens Semiconductor Group, BUZ102 Datasheet - Page 8

• Manufacturer Part Number: BUZ102
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 102 µH
190
160
140
120
100
mJ
80
60
40
20
62
60
59
58
57
56
55
54
53
52
51
50
49
48
47
V
0
-60
20
= ( T
D
40
-20
= 42 A, V
j
)
60
20
80
AS
DD
= ( T
100
60
= 25 V
j
120
)
100
140
°C
T
T
°C
j
j
180
180
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
10
)
20
= 63 A
0,2
30
V
DS max
40
50
60
BUZ 102
07/96
0,8
Q
nC
V
DS max
Gate
80