BUZ332A Siemens Semiconductor Group, BUZ332A Datasheet
BUZ332A
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BUZ332A Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated www.DataSheet4U.com Type V DS BUZ 332 A 600 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C ...
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Electrical Characteristics Parameter Static Characteristics www.DataSheet4U.com Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain ...
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Electrical Characteristics Parameter Dynamic Characteristics www.DataSheet4U.com Transconductance DS(on)max, Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current www.DataSheet4U.com °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 160 W www.DataSheet4U.com P tot 120 100 Safe operating area parameter 0. ...
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Typ. output characteristics parameter µ 150W l tot www.DataSheet4U.com ...
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Drain-source on-resistance (on) j parameter 4.0 www.DataSheet4U.com 3 (on) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 Typ. capacitances ...
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Avalanche energy E parameter 16 600 mJ 500 www.DataSheet4U.com E AS 450 400 350 300 250 200 150 100 Drain-source breakdown ...
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Semiconductor Group Package Outlines TO-218 AA Dimension BUZ 332 A 07/96 ...