BUZ342 Siemens Semiconductor Group, BUZ342 Datasheet
BUZ342
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BUZ342 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • Ultra low on-resistance • 175°C operating temperature Type V DS BUZ 342 50 V Maximum Ratings Parameter Continuous drain current T ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage 120 ...
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Power dissipation tot C 450 W P 350 tot 300 250 200 150 100 100 120 140 Safe operating area parameter: ...
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Typ. output characteristics parameter µs p 140 P = 400W l tot 120 I 110 D 100 ...
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Drain-source on-resistance (on) j parameter 0.028 0.024 R 0.022 DS (on) 0.020 0.018 0.016 0.014 98% 0.012 0.010 typ 0.008 0.006 0.004 0.002 0.000 ...
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Avalanche energy parameter 128 µH GS 500 mJ 400 E AS 350 300 250 200 150 100 50 0 ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 BUZ 342 07/96 ...