NE3210S01-T1 NEC, NE3210S01-T1 Datasheet

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NE3210S01-T1

Manufacturer Part Number
NE3210S01-T1
Description
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Manufacturer
NEC
Datasheet

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Part Number:
NE3210S01-T1
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Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DESCRIPTION
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
• Gate Length: Lg
• Gate Width : Wg = 160 m
ORDERING INFORMATION (PLAN)
ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS (T
NE3210S01-T1
NE3210S01-T1B
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Drain Current
Input Power
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
Part Number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Characteristics
Parameter
X to Ku BAND SUPER LOW NOISE AMPLIFER
0.20 m
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
N-CHANNEL HJ-FET
The mark
Supplying Form
DATA SHEET
A
Symbol
= 25°C)
V
Symbol
P
I
DS
D
in
V
V
P
T
T
I
I
GS
stg
DS
D
G
tot
ch
shows major revised points.
MIN.
A
1
5
= +25°C)
–65 to +125
Ratings
IDSS
TYP.
–3.0
100
165
125
4.0
10
2
MAX.
15
Marking
3
0
NE3210S01
K
Unit
mW
mA
°C
°C
V
V
A
dBm
Unit
mA
V
©
1999

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