NE3210S01-T1 NEC, NE3210S01-T1 Datasheet - Page 3

• Manufacturer Part Number: NE3210S01-T1
• Description: X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
250
200
150
100
50
60
40
20
–2.0
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Gate to Source Voltage V
Ambient Temperature T
100
–1.0
150
A
GS
( C)
A
V
200
(V)
DS
= +25 °C)
= 2 V
Data Sheet P14067EJ2V0DS00
250
0
100
80
60
40
20
24
20
16
12
0
8
4
1
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage V
2
|S
MSG.
21S
Frequency f (GHz)
|
2
4
1.0
6
NE3210S01
8 10
DS
MAG.
V
I
D
(V)
DS
14
V
= 10 mA
GS
= 2 V
–0.2 V
–0.4 V
–0.6 V
= 0 V
20
2.0
30
3