NE325S01-T1 NEC, NE325S01-T1 Datasheet
NE325S01-T1
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NE325S01-T1 Summary of contents
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... GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current D I Gate Current G P Total Power Dissipation T T Channel Temperature CH T Storage Temperature stg Note: 1. ...
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TYPICAL COMMON SOURCE SCATTERING PARAMETERS 1.0 0.5 18 GHz 18 GHz 0 - 0 FREQUENCY S 11 (GHz) MAG ANG 2.0 0.969 -24.84 2.5 0.957 -30.87 3.0 0.944 ...
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... NE325S01 NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.8 RG VTOSC 0 RD ALPHA 8 RS BETA 0.103 RGMET GAMMA 0.092 KF GAMMADC 0. TNOM DELTA 1 XTI VBI 0.715 EG IS 3e-13 VTOTC N 1.22 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS 0.13e-12 RDB 5000 CBS 1e-9 CGSO ...
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... NE325S01 Bulk NE325S01-T1 Tape & Reel 1000 pcs./reel NE325S01-T1B Tape & Reel 4000 pcs./reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...