NE325S01-T1 NEC, NE325S01-T1 Datasheet - Page 2

• Manufacturer Part Number: NE325S01-T1
• Description: C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• Manufacturer: NEC

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result in
SYMBOLS
permanent damage.
V
V
T
T
P
I
I
CH
DS
GS
D
G
stg
T
250
200
150
100
50
60
40
20
0
0
-2.0
TOTAL POWER DISSIPATION vs.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate to Source Voltage, V
GATE TO SOURCE VOLTAGE
Ambient Temperature, T
AMBIENT TEMPERATURE
PARAMETERS
50
DRAIN CURRENT vs.
100
-1.0
150
A
UNITS RATINGS
GS
V
mW
200
(°C)
mA
µA
DS
°C
°C
V
V
(V)
= 2 V
1
-65 to +125
250
(T
0
A
-3.0
I
100
165
125
4.0
DSS
= 25°C)
(T
A
= 25°C)
1.5
100
1.0
0.5
2.0
24
20
16
12
80
60
40
20
0
8
4
0
MAXIMUM AVAILABLE GAIN, FORWARD
1
NOISE FIGURE, ASSOCIATED GAIN
INSERTION GAIN vs. FREQUENCY
V
f = 12 GHz
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
= 2V
2
vs. DRAIN CURRENT
DRAIN CURRENT vs.
Drain Current, I
IS
MSG.
Frequency, f (GHz)
21s
10
l
2
4
1.5
Ga
NF
6
D
8 10
20
(mA)
MAG.
V
GS
DS
V
I
D
= 0 V
14
DS
= 10 mA
-0.2 V
-0.4 V
-0.6 V
-0.8 V
(V)
= 2 V
20
3.0
30
30
14
13
12
11
10