NE334S01-T1B NEC, NE334S01-T1B Datasheet

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NE334S01-T1B

Manufacturer Part Number
NE334S01-T1B
Description
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Manufacturer
NEC
Datasheet
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DESCRIPTION
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
RECOMMENDED OPERATING CONDITION (T
NE334S01-T1
NE334S01-T1B
Drain to Source Voltage
Drain Current
Input Power
PART NUMBER
The NE334S01 is a Herero Junction FET that utilizes the
Super Low Noise Figure & High Associated Gain
Gate Width: W
CHARACTERISTIC
NF = 0.25 dB TYP., G
g
= 280
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
C BAND SUPER LOW NOISE AMPLIFIER
SUPPLYING FORM
m
HETERO JUNCTION FIELD EFFECT TRANSISTOR
m
a
SYMBOL
= 16.0 dB TYP. at f = 4 GHz
V
P
V
V
T
I
P
T
DS
D
I
in
DS
GS
D
stg
tot
ch
N-CHANNEL HJ-FET
–65 to +125
A
MIN.
DATA SHEET
= 25
–3.0
I
300
125
4.0
DSS
° °
MARKING
C)
A
C
TYP.
= 25
mW
15
mA
2
°
°
V
V
C
C
° °
C)
MAX.
2.5
20
0
0.125 ± 0.05
2
dBm
Unit
mA
V
PACKAGE DIMENSIONS
NE334S01
0.65 TYP.
1
C
2.0 ± 0.2
1.9 ± 0.2
4.0 ± 0.2
(Unit: mm)
1.6
3
0.4 MAX.
©
4
1. Source
2. Drain
3. Source
4. Gate
1996

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NE334S01-T1B Summary of contents

Page 1

... Gate Width 280 m g ORDERING INFORMATION PART NUMBER SUPPLYING FORM NE334S01-T1 Tape & reel 1000 pcs./reel NE334S01-T1B Tape & reel 4000 pcs./reel ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature ...

Page 2

... Associated Gain 2 ° ° MIN. TYP. MAX. I 0.5 10 GSO 150 DSS - - - 0.2 0.9 2.5 GS(off 0.25 0.35 G 15.0 16.0 a NE334S01 UNIT TEST CONDITIONS 100 mA ...

Page 3

... ½ ½½ ½ × - × NE334S01 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –0.2 V –0.4 V –0 Drain to Source Voltage - MSG 21S MAG ...

Page 4

... Rmax +45˚ –45˚ –0.5 Rmax. = 1.0 NE334S01 Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S 12 +90˚ +45˚ –45˚ ...

Page 5

... NE334S01 S 22 ANG. MAG. ANG. (deg.) (deg.) 68.4 .415 –27.5 65.9 .479 –35.8 57.5 .423 –43.0 54.1 .429 –47.9 49.6 .426 –51.7 45.8 .406 – ...

Page 6

... NE334S01 Delay Mason’ .036 23.90 .036 8.50 1.13 .064 5.83 .042 5.04 .042 4.47 .046 3.12 .038 27.689 2.47 .038 25.567 1.94 .039 27.520 1.87 .040 25.660 1.56 .041 25.850 1.33 .043 24.669 1.18 .041 23.510 1 ...

Page 7

... Noise Parameters <TYPICAL CONSTANT NOISE FIGURE CIRCLE> 0 <Noise Parameters> Freq (GHz) NF (dB) min 2.0 0.23 4.0 0.25 6.0 0.28 8.0 0.31 10.0 0.38 12.0 0.48 14.0 0.60 16.0 0.73 18.0 0.88 1.0 2.0 0.5 opt 0.4 dB 0.6 dB 1.0 0.8 dB –0.5 –2.0 –1.0 Ga (dB) MAG. 17.0 0.77 16.0 0.58 14.7 0.43 13.6 0.32 12.5 0.27 11.5 0.27 10.5 0.34 9.6 0.48 8.8 0.69 NE334S01 GHz / . opt R /50 n ANG. (deg.) 15 0.19 43 0.18 82 0.13 127 0.08 175 0.07 –139 0.10 –100 0.17 –70 0.29 –56 0.46 7 ...

Page 8

... TYPICAL MOUNT PAD LAYOUT 8 2.4 mm TYP. NE334S01 ...

Page 9

... Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Soldering conditions ° below, Reflow time: 30 ° higher), Number of reflow process: 1, ° below, Flow time: 10 seconds or below, NE334S01 Symbol IR30-00 9 ...

Page 10

... NE334S01 ...

Page 11

... NE334S01 11 ...

Page 12

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. Caution NE334S01 M4 96. 5 ...

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